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ZE1.3C
SILICON PLANAR POWER ZENER DIODES
Features * Low dynamic resistance * High reliability
Mechanical Data * Case: DO-41 Molded plastic * Epoxy: UL 94V-0 rate flame retardant * Terminals: Plated axial leads, solderable per MIL-STD-202 method 208C * Polarity: Color band denotes cathode end * Mounting position: Any
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Power Dissipation Junction Temperature Storage Temperature Range
1)
Symbol Ptot Tj TS
Value 1.3
1)
Unit W
O
200 - 50 to + 200
C C
O
Valid provided that leads at a distance of 9.5 mm from case are kept at ambient temperature.
Characteristics at Ta = 25 OC
Parameter Thermal Resistance Junction to Ambient Air Forward Voltage at IF = 200 mA
1)
Symbol RthA VF
Max. 130 1
1)
Unit K/W V
Valid provided that leads at a distance of 9.5 mm from case are kept at ambient temperature.
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/07/2008 FD
ZE1.3C
Characteristics at Ta = 25 OC
Type ZE1.3C2V7 ZE1.3C3V0 ZE1.3C3V3 ZE1.3C3V6 ZE1.3C3V9 ZE1.3C4V3 ZE1.3C4V7 ZE1.3C5V1 ZE1.3C5V6 ZE1.3C6V2 ZE1.3C6V8 ZE1.3C7V5 ZE1.3C8V2 ZE1.3C9V1 ZE1.3C10 ZE1.3C11 ZE1.3C12 ZE1.3C13 ZE1.3C15 ZE1.3C16 ZE1.3C18 ZE1.3C20 ZE1.3C22 ZE1.3C24 ZE1.3C27 ZE1.3C30 ZE1.3C33 ZE1.3C36 ZE1.3C39 ZE1.3C43 ZE1.3C47 ZE1.3C51 ZE1.3C56 ZE1.3C62 ZE1.3C68 ZE1.3C75 ZE1.3C82 ZE1.3C91 ZE1.3C100 ZE1.3C110 ZE1.3C120 ZE1.3C130 ZE1.3C150 ZE1.3C160 ZE1.3C180 ZE1.3C200
1)
Zener Voltage Range 1) Vznom VZT at IZT V mA V 2.7 2.5...2.9 80 3.0 2.8...3.2 80 3.3 3.1...3.5 70 3.6 3.4...3.8 60 3.9 3.7...4.1 60 4.3 4...4.6 50 4.7 4.4...5 45 5.1 4.8...5.4 45 5.6 5.2...6 45 6.2 5.8...6.6 35 6.8 6.4...7.2 35 7.5 7.0...7.9 35 8.2 7.7...8.7 25 9.1 8.5...9.6 25 10 9.4...10.6 25 11 10.4...11.6 20 12 11.4...12.7 20 13 12.4...14.1 20 15 13.8...15.6 15 16 15.3...17.1 15 18 16.8...19.1 15 20 18.8...21.2 10 22 20.8...23.3 10 24 22.8...25.6 10 27 25.1...28.9 8 30 28...32 8 33 31...35 8 36 34...38 8 39 37...41 6 43 40...46 6 47 44...50 4 51 48...54 4 56 52...60 4 62 58...66 4 68 64...72 4 75 70...79 4 82 77...87 2.7 91 85...96 2.7 100 94...106 2.7 110 104...116 2.7 120 114...127 2 130 124...141 2 150 138...156 2 160 153...171 1.5 180 168...191 1.5 200 188...212 1.5
ZZT Max. () 20 20 20 15 15 13 13 10 7 4 3.5 3 5 5 7 8 9 10 15 15 20 24 25 25 30 30 35 40 50 50 90 115 120 125 130 135 200 250 350 450 550 700 1000 1100 1200 1500
Dynamic Resistance at IZT ZZK mA Max. () 80 400 80 400 70 400 60 500 60 500 50 500 45 600 45 500 45 400 35 300 35 300 35 200 25 200 25 200 25 200 20 300 20 350 20 400 15 500 15 500 15 500 10 600 10 600 10 600 8 750 8 1000 8 1000 8 1000 6 1000 6 1000 4 1500 4 1500 4 2000 4 2000 4 2000 4 2000 2.7 3000 2.7 3000 2.7 3000 2.7 4000 2 4500 2 5000 2 6000 1.5 6500 1.5 7000 1.5 8000
at IZK mA 1 1 1 1 1 1 1 1 1 1 1 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
Reverse Leakage Current IR at VR Max. (A) V 150 1 100 1 40 1 20 1 10 1 3 1 3 1 1 1.5 1 2 1 3 1 4 1 4.5 1 6.2 1 6.8 0.5 7 0.5 8.2 0.5 9.1 0.5 10 0.5 11 0.5 12 0.5 13 0.5 15 0.5 16 0.5 18 0.5 20 0.5 22 0.5 24 0.5 27 0.5 30 0.5 33 0.5 36 0.5 39 0.5 43 0.5 47 0.5 51 0.5 56 0.5 62 0.5 68 0.5 75 0.5 82 0.5 91 0.5 100 0.5 110 0.5 120 0.5 130 0.5 150
Tested with pulses tp = 20 ms.
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/07/2008 FD

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